Changing the Parameters of MIS Structures with REE Compounds under Conditions of High Humidity

The properties of MIS structures with yttrium, neodymium, samarium fluorides on germanium, neodymium and n p silicon substrates, as well Al-Y 2 O 3 -nSi, -pSi under conditions high ambient humidity were studied. Additionally, the exposed to an electric field ~0.5-4 MV/cm. For films fluoride a clear increase in maximum specific capacitance increasing relative medium is observed. It has been found that incorporation water into structure REE film studied this work sorption does not cause irreversible changes dielectric at temperatures. Keywords: structure, silicon, density surface states, humidity.